Guillermo Castro, Kiril Ivanov, Miguel Jiménez,Juan M. Trujillo-Sevilla, Juan Manuel Ramos-Rodríguez, Jan O. Gaudestad
Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized to achieve a very accurate on-product-overlay (OPO). Due to the impact of overlay errors inherent in all reflective lithography systems, EUV reticles will need to adhere to flatness specifications below 10nm, which metric is not possible to achieve using current tooling infrastructure…