Kiril Ivanov Kurtev, Juan M. Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez
The increasing demand for higher resolution and faster machinery in silicon wafer inspection is driven by the rise in electronic device production and the decreasing size of microchips. This paper presents the design and implementation of a device capable of accurately measuring the surface of silicon wafers using the stitching technique. We propose an optical system design for measuring the surface profile, specifically targeting the roughness and nanotopography of a silicon wafer. The device achieves a lateral resolution of 7.56 μm and an axial resolution of 1 nm. It can measure a full 300-mm wafer in approximately 60 min…