Guillermo Castro, Kiril Ivanov, Miguel Jiménez,Juan M. Trujillo-Sevilla, Juan Manuel Ramos-Rodríguez, Jan O. Gaudestad.
Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized to achieve a very accurate on-product-overlay (OPO). Due to the impact of overlay errors inherent in all reflective lithography systems, EUV reticles will need…