Kiril Ivanov Kurtev, Juan M. Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez
The increasing demand for higher resolution and faster machinery in silicon wafer inspection is driven by the rise in electronic device production and the decreasing size of microchips. This paper presents the design and implementation of a device capable of accurately measuring the surface of silicon wafers using the stitching technique. We propose an optical system design for measuring the surface profile, specifically targeting the roughness and nanotopography of a silicon wafer. The device achieves a lateral resolution of 7.56 μm and an axial resolution of 1 nm. It can measure a full 300-mm wafer in approximately 60 min…
Kiril Ivanov Kurtev, Juan M. Trujillo-Sevilla, Jose Manuel Ramos-Rodríguez
In this work, we demonstrate the use of a chromatic confocal sensor for long-distance measurements. The sensor increases the working distance of state-of-the-art confocal sensors by a factor of 10, reaching a working distance of 620 mm. The chromatic aberration exhibited by a lens was utilized to establish the working range. The chromatic dispersion of the optics led to images of the different wavelength components at different longitudinal points along the optical axis. The sensor employs a robust algorithm to measure relative displacements of the sample’s motion…
Carolina Belda-Para, Gonzalo Velarde-Rodríguez, José G Marichal-Hernández, Miriam Velasco-Ocaña, Juan M Trujillo-Sevilla, Nicolas Alejandre-Alba, José M Rodríguez-Ramos
This study aims to evaluate the applicability of the high-resolution WaveFront Phase Imaging Sensor (WFPI) in eyes with Fuchs’ Endothelial Corneal Dystrophy (FECD) through qualitative and quantitative analysis using a custom-designed Automatic Guttae Detection Method (AGDM). The ocular phase was measured using the t·eyede aberrometer and then was processed to obtain its High-Pass Filter Map…
Guillermo Castro, Kiril Ivanov, Miguel Jiménez,Juan M. Trujillo-Sevilla, Juan Manuel Ramos-Rodríguez, Jan O. Gaudestad
Wafer overlay errors due to non-flatness and thickness variations of a mask need to be minimized to achieve a very accurate on-product-overlay (OPO). Due to the impact of overlay errors inherent in all reflective lithography systems, EUV reticles will need to adhere to flatness specifications below 10nm, which metric is not possible to achieve using current tooling infrastructure…
Miguel Jiménez, Kiril Ivanov Kurtev, Juan M. Trujillo-Sevilla, Rubén Abrante, Jose Manuel Ramos-Rodríguez, Jan O. Gaudestad
Wave Front Phase Imaging (WFPI), a new wafer geometry technique, is presented, that acquires 16.3 million data points in 12 seconds on a full 300mm wafer, providing lateral resolution of 65μm while holding the wafer vertically. The flatness of the silicon wafers used to manufacture integrated circuits (IC) is controlled to tight tolerances to help ensure that the full wafer is sufficiently flat for lithographic processing. Advanced lithographic patterning processes require a detailed map of the free, non-gravitational wafer shape to avoid overlay errors caused by depth-of-focus issues. For a wafer shape system to perform in a high-volume manufacturing environment, repeatability is a critical measure that needs to be tested. We present WFPI as a…
Kiril Ivanov Kurteva, Guillermo Castro Luis, Juan M. Trujillo-Sevilla, Jan O. Gaudestad, Richard van Haren, Leon van Dijk, Ronald Otten
On product overlay (OPO) is one of the most critical parameters for continued scaling according to Moore’s law. Besides the lithography scanner, also non-lithography processes contribute to the OPO performance. For example, processes like etching and thin film deposition can introduce stress, or stress changes, in the thin films on top of the silicon wafers. In general, the scanner Higher Order Wafer Alignment model up to 3rd order (HOWA3) has proven to be adequate to correct for most process-induced wafer distortions. This model is typically used with 28 wafer alignment marks placed across the wafer to correct for more global stress-induced distortions…
Kiril Ivanov Kurtev, Juan M. Trujillo-Sevilla, Guillermo Castro Luis, Miguel Jiménez, Rubén Abrante, José Manuel Ramos-Rodríguez, Jan O. Gaudestad
On-product overlay (OPO), with its continually shrinking overlay budget, remains a constraint in the continued effort at increasing device yield. Overlay metrology capability currently lags the need for improved overlay control, especially for multi-patterning applications. The free form shape of the silicon wafer is critical for process monitoring and is usually controlled through bow and warp measurements during the process flow. As the OPO budget shrinks, non-lithography process induced stress causing in plane distortions (IPD) becomes a…
Juan M. Trujillo-Sevilla, Rubén Abrante, Miguel Jiménez, Kiril Ivanov Kurtev, Guillermo Castro Luis, Jan O. Gaudestad
The shrinking depth of focus of high numerical aperture immersion microlithography optics requires a tight wafer flatness budget. Bare wafer surface topography variation is a significant part of the focus budget for microlithography. Thus, as the wafer surface quality becomes increasingly important, the metrology to control the surface quality is increasingly challenged1. Advanced lithographic patterning processes require a detailed map of the free, non-gravitational, wafer shape, to avoid overlay errors caused by depth-of-focus issues2. The semiconductor industry has been using interferometry-based techniques for measuring the free form wafer shape of blank silicon wafers for several years1. In this paper we introduce a…
Juan M. Trujillo-Sevilla, Óscar Casanova-González, Alex Roqué-Velasco, Miguel Jesús Sicilia, Javier González Pardo, José Manuel Ramos-Rodríguez, Jan O. Gaudestad
On product overlay (OPO) is one of the most critical parameters for the continued scaling according to Moore’s law. Without good overlay between the mask and the silicon wafer inside the lithography tool, yield will suffer1. As the OPO budget shrinks, non-lithography process induced stress causing in plane distortions (IPD) becomes a more dominant contributor to the shrinking overlay budget2. To estimate the process induced in-plane wafer distortion after cucking…
Juan M. Trujillo-Sevilla, Alex Roqué-Velasco, Miguel Jesús Sicilia, Óscar Casanova-González, José Manuel Rodríguez-Ramos, Jan O. Gaudestad
Wave Front Phase Imaging (WFPI) is a new wafer shape measurement technique that acquires millions of data points in just seconds or less, on a full 300mm silicon wafer. This provides lateral resolution well below 100μm with the possibility of reaching the lens’ optical resolution limitation between 3-4μm…